Hynix �i ISi Collaboration On Z- BERBEC Memorie Tehnologie

Innovative Silicon (ISi) �i Hynix announced ieri that ei voin�� a voi both working on un acord la spre a da un permis s�u Z- BERBEC memorie tehnologie la spre a fi implemented on Hynix future memorie rezultat linii. Art.hot. collaboration effort voin�� a voi a fi capabil la spre benefit Hynix cu Z- BERBEC tehnologie integrated la spre s�u DRAM manufacturing linii. Similar a da un permis was primul m�re� la spre AMD din sf�r�it de 2005 pentru s�u microprocessor rezultat linii dezvoltare.

Z- Berbec, sau uneori known as “zero capacitor RAM” is un low a costa memorie tehnologie that has advantages �nc� o dat� curent DRAM sau SRAM tehnologie �n�untru terms density �i cuv�ntare. Z- BERBEC memorie uses capacitance magazin �n floating corp efect de la SOI wafer se, care eliminates art.hot. supliment capacitors necesar. Cu unic singur transistor bitcell ( f�r� additional capacitors), art.hot. electronic density a putea a fi increased as compact la spre DRAM �i SRAM. This ajutor la spre crevet s�u size cinci timp mai mult as compact la spre SRAM �i doi timp pentru DRAM theoretically. While inferior art.hot. a costa �i increasing art.hot. density, art.hot. t�rziu a putea a fi improved as well datorie la mai mic pachet size �i �ort tractor length.

Unul de la real cerere cu advantages de folosire Z- BERBEC tehnologie is art.hot. on-chip cache memorie pentru art.hot. microprocessor. Cu art.hot. increase size �i mai repede cuv�ntare de la cache, art.hot. �nc� o dat� CPU performance a putea a fi improved significantly. Initially Hynix Mai experience huge investment �i proces comer�-off chiar la spre fin tune s�u design �i manufacturing proces, numai art.hot. Korean DRAM memorie a face voi a se a�tepta la lung term gain dup� transitioning �nc� o dat� la spre this nou tehnologie.

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